Our vision is to transform how the world uses information to enrich life for all . Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. At Micron Technology, Inc., as an Engineer-CVD Metals/R&D, you'll play a key role within the Metals Technology team, focusing on the development of thin films that meet the electrical requirements of rapidly evolving DRAM devices. Your responsibilities will include improving material properties to reduce line resistivity at smaller scales and optimizing permittivity and dielectric leakage. You’ll take ownership of process development, statistical process control, and hardware advancement to ensure readiness for manufacturing, working closely with integration and device teams. Within Micron’s Technology Development (TD) organization, you’ll work in a state-of-the-art semiconductor facility, developing next-generation memory technology. As a member of the thin film team, you’ll help advance materials and processes for future interconnects, transistors, and memory cells. Your collaboration will extend across internal groups such as equipment, integration, device physics, and pilot manufacturing, as well as with external suppliers of equipment and chemicals to design tools for advanced memory production. The position encourages independent work and participation in diverse teams to create innovative solutions.