In this position within Wolfspeed’s Power Device Technology Development department, you will be leading SiC power device development projects, with an emphasis on fundamental understanding of device physics and the effects of materials properties on SiC power device behaviors. You will be participating in many aspects of silicon carbide power device development, with a focus on metal-oxide semiconductor (MOS) dielectric and interface properties. A better understanding in these areas will provide deeper insights into the device behavior and ultimately lead to optimized and improved device properties. MOS related reliability studies will also be performed in this role.
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Job Type
Full-time
Career Level
Mid Level
Education Level
Ph.D. or professional degree
Number of Employees
1,001-5,000 employees