Sr Principal Device Design & Integration Engineer

Renesas Electronics • Austin, TX

2d • Hybrid

About The Position

The Sr. Principle Device Design and Integration Engineer will lead the device development of the new low-voltage GaN platform. This position will work with multiple function teams to cover from epi, device design, wafer fab process, testing to the final qualifications to deliver the new GaN platform.

Requirements

• Master’s degree or PhD in Electrical Engineering or related fields, with 5+ years of GaN development experience
• Strong familiarity with GaN device physics, device design, wafer processing, layout and characterization. LV emode is a plus.
• Proficient in data manipulation and analysis skill. Familiar with JMP.
• Exceptional verbal and written communication skills.
• Self-motivated and adaptable. Able to work independently as well as in a team environment.

Nice To Haves

• Familiarity with reliability physics and failure analysis is a plus.
• Familiarity with JEDEC and AEC-Q101 qualification standards is a plus.

Responsibilities

• Lead the LV GaN device group, and work closely with multiple functional groups to develop the GaN platform
• Design GaN structures and chips, meeting cost, performance and reliability specifications.
• Generate test and qualification protocols.
• Analyze on-wafer and in-package test results.
• Provide physics-based explanation for the observed behaviors.
• Ensure successful product qualification.
• Drive root cause investigation for performance or quality issues.
• Compile reports for internal and external communication.

What This Job Offers

• Job Type: Full-time
• Career Level: Mid Level
• Number of Employees: 5,001-10,000 employees