Our vision is to transform how the world uses information to enrich life for all. Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. Responsibilities Lead end‑to‑end physical design for High Bandwidth Memory (HBM) base and memory dies from netlist through GDSII, including floorplanning, power planning, placement, clock tree synthesis, routing, and signoff. Define and drive HBM‑specific physical architecture, including channel partitioning, physical layer (PHY) placement, through‑silicon via (TSV) keep‑out regions, and die‑package co‑design alignment. Optimize bandwidth, latency, power, and yield through architecture‑level tradeoffs and collaboration with memory architecture, PHY, RTL, synthesis, design‑for‑test, and packaging teams. Lead power delivery network design and ensure IR drop, electromigration, and thermal closure across all operating modes. Oversee timing closure across corners for high‑speed logic and HBM PHY interfaces, addressing signal integrity, noise, and crosstalk. Ensure physical signoff readiness, including static timing analysis, IR/EM, signal integrity, design rule checks, layout versus schematic, density, and reliability compliance. Drive engineering change order strategies, flow improvements, automation, and methodology development for HBM physical design. Mentor engineers and serve as a key technical voice in tape‑out and executive design reviews.
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Job Type
Full-time
Career Level
Principal